FDB6676 mosfet equivalent, n-channel mosfet.
* 42 A, 30 V. RDS(ON) = 6.0 mΩ @ VGS = 10 V RDS(ON) = 7.5 mΩ @ VGS = 4.5 V
* Critical DC electrical parameters specified at elevated temperature
* High perfo.
* Synchronous rectifier
* DC/DC converter .
D
D
G
G D S TO-220
FDP Series
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S
TO-263AB
FDB Series
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Abso.
This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for “low side” synchronous rectifier operation, provi.
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